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2004³â¿¡ ±×·¡ÇÉÀ» ºÐ¸®Çϴµ¥ ¼º°øÇÑ ÀÌÈÄ·Î, »õ·Î¿î Á¾·ùÀÇ 2Â÷¿ø Àç·á¸¦ Á¦Á¶ÇÏ´Â ¿¬±¸°¡ ¸¹ÀÌ ÁøÇàµÇ¾ú´Ù. ÀÌ·± 2Â÷¿ø Àç·áµé Áß¿¡ ¹êµå°¸À» °¡Áø °ÍÀÌ Å« °ü½ÉÀ» ²ø¾ú´Âµ¥, ÀÌ°ÍÀº ±×·¡ÇÉÀÌ ¹êµå°¸À» °¡ÁöÁö ¾Ê±â ¶§¹®ÀÌ´Ù. ¿ì¸£Ã÷±¤ ±¸Á¶(wurtzite crystalline structure)¸¦ °¡Áø ZnO´Â ±×·¡ÇÉ°ú °°Àº Æò¸é ±¸Á¶·Î º¯È¯½Ãų ¼ö ÀÖ´Ù. ZnO°¡ ¸î ¿øÀÚ Ãþ ÀÌÇÏ·Î ¾ã¾ÆÁú ¶§ Zn ¿øÀÚ¿Í O ¿øÀÚ´Â ¹úÅ© »ç¸éü ±¸Á¶ ´ë½Å¿¡ »ï¹æÁ¤°è-Æò¸é ¹èÀ§ ¼Ó¿¡ Á¸ÀçÇÑ´Ù.

À̹ø ¿¬±¸ÁøÀº ÀÌÀü¿¡ ±×·¡ÇÉ°ú °°Àº ZnO ¿øÀÚÃþÀ» ¸¸µé¾úÁö¸¸, ÀÌ·± ¸ðµç »ùÇõéÀº ¸¸µé±â À§Çؼ­ ±Ý¼Ó ±âÆÇÀÌ ÇÊ¿äÇß´Ù. ÀÌ Àç·á´Â »ùÇÃÀÇ Àü±âÀû Ư¼ºÀ» º¯È­½ÃÅ°´Â ±âÆÇ°úÀÇ »óÈ£ÀÛ¿ëÀ» ÇÏÁö ¾Ê±â ¶§¹®¿¡ ´õ ³ªÀº ¼º´ÉÀ» °¡Áø´Ù. IFW Dresden, Æú¶õµå °úÇпø(Polish Academy of Sciences), ¾¥Àú¿ì ´ëÇÐ(Soochow University)ÀÇ ¿¬±¸ÁøÀº ±×·¡ÇÉ ±â°ø ¼Ó¿¡ ´Üµ¶À¸·Î ¼­ ÀÖ´Â g-ZnO ¸âºê·¹ÀÎÀ» Á¦Á¶Çϴµ¥ ¼º°øÇß´Ù. À̹ø ¿¬±¸ÁøÀº Åõ°ú ÀüÀÚ Çö¹Ì°æ ±×¸®µå À§·Î ±×·¡ÇÉ ½ÃÆ®¸¦ Àü»ç½ÃÄ×´Ù. ±× ÈÄ¿¡ ±×·¡ÇÉ ½ÃÆ® À§¿¡ ¾Æ¿¬ ¾Æ¼¼Æ¿¾Æ¼¼Åä³×ÀÌÆ®(zinc acetylacetonate)¸¦ ±â»ó ÁõÂø½ÃÄ×´Ù.

¡°¾Æ¿¬À» °¡¿­ÇÔÀ¸·Î½á, ¿ì¸®´Â ¼Ò·®ÀÇ ¾Æ¿¬ »êÈ­¹°ÀÌ ±×·¡ÇÉ À§¿¡ Á¸ÀçÇϵµ·Ï ºÐÇؽÃÄ×´Ù¡±°í Rümmeli°¡ ¼³¸íÇß´Ù. ¡°¿ì¸®´Â »ùÇÃÀ» TEMÀ¸·Î Àü»ç½ÃÄ×°í, ZnO ¿øÀÚµéÀÌ ±×·¡ÇÉ Ç¥¸é ÁÖÀ§·Î ¿òÁ÷ÀÏ ¼ö ÀÖµµ·Ï ÀÌ°ÍÀ» Á¶»çÇß´Ù. ¶ÇÇÑ ¿ì¸®´Â ±×·¡ÇÉ ¼Ó¿¡ ±â°øÀ» Çü¼º½ÃÅ°µµ·Ï TEMÀÇ ÀüÀÚºöÀ» »ç¿ëÇß´Ù. ZnO ¿øÀÚµéÀÌ ±â°øÀ» ¸¸³ª¸é, ±×µéÀ» ¼öÁýÇÏ°Ô µÇ°í ¸âºê·¹ÀÎÀ» Çü¼ºÇϱ⠽ÃÀÛÇÑ´Ù¡±°í Rümmeli°¡ µ¡ºÙ¿´´Ù. 

ÀÌ ÇÁ·Î¼¼½º µ¿¾È¿¡, ÇϺΠ±×·¡ÇÉ ¼ÓÀÇ ¿øÀÚµéÀº »ç¶óÁö°í, ±×·¡ÇÉ ±â°ø ¼ÓÀÇ ZnO ¸âºê·¹Àθ¸ÀÌ ³²´Â´Ù. ÀÌ·± ¸âºê·¹ÀÎÀº ±×·¡ÇÉ ´ÜÀÏÃþ¿¡ ºñÇؼ­ ¿ì¼öÇÑ Åº¼º°ú À¯¿¬¼ºÀ» °¡Áö°í ¾ÐÀü¼ºÀ» °¡Áö°Ô µÈ´Ù. ±×µéÀº 3.576eVÀÇ Æø³ÐÀº ÀüÀÚ ¹êµå°¸°ú ³ôÀº ¿©±â °áÇÕ ¿¡³ÊÁö¸¦ °¡Áø ¹ÝµµÃ¼ÀÌ´Ù. ÀÌ°ÍÀº ±×µéÀÌ ÀüÀÚÀåÄ¡, Åõ¸í ÀüÀÚÀåÄ¡, Àڿܼ± ¹ß±¤±â, ¾ÐÀü ¼ÒÀÚ, È­ÇÐ ¼¾¼­ µîÀ» ¸¸µå´Âµ¥ À¯¿ëÇÏ°Ô Àû¿ëµÉ ¼ö ÀÖ´Ù´Â °ÍÀ» º¸¿©ÁØ´Ù. ÀÌ ¿¬±¸°á°ú´Â Àú³Î ACS Nano¿¡ ¡°In Situ Observations of Free-Standing Graphene-like Mono- and Bilayer ZnO Membranes¡±¶ó´Â Á¦¸ñÀ¸·Î °ÔÀçµÇ¾ú´Ù(DOI: 10.1021/acsnano.5b05481).

±×¸². ±×·¡ÇÉ ±â°ø ¼Ó¿¡ ¸Å´Þ·Á ÀÖ´Â g-ZnO ´ÜÀÏÃþ ¸âºê·¹ÀÎ.
 
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Zinc oxide goes graphene-like

Free-standing graphene-like mono- and bi-layer zinc oxide (ZnO) membranes have been made for the first time by researchers in Germany, Poland, Korea and China. These materials should have very different properties from other ZnO structures, such as a wide semiconducting bandgap, and could thus find use in a variety of electronics applications.

Metal oxides are widely employed in electronic and magnetic devices, and ZnO is particularly useful because of its semiconducting and piezoelectric properties. This oxide can exist in a number of different shapes, such as nanotubes, nanowires, nanorods, nanobelts, tertrapods and nanoribbons.

Since researchers succeeded in isolating graphene (a sheet of carbon just one atom thick) in 2004, they have been looking into producing other new classes of 2D materials too, especially those with an intrinsic bandgap (which graphene does not have in its pristine state). ZnO with a so-called wurtzite crystalline structure transforms into a planar, graphene-like architecture in which the Zn and O atoms reside in a trigonal-planar coordination instead of the bulk tetrahedral configuration that forms when ZnO is thinned down to a few atomic layers.

Although researchers have made graphene-like ZnO atomic layers before now, all these samples required a metal substrate to form over. The free-standing material would be better, since there would be no unwanted interactions with the substrate that might modify the sample¡¯s electronic properties.
g-ZnO membranes freely suspended in graphene pores

A team led by Mark Rümmeli of the IFW Dresden, the Polish Academy of Sciences and Soochow University has now managed to produce g-ZnO membranes freely suspended in graphene pores. The researchers started with a sheet of graphene that they transferred onto special transmission electron microscopy (TEM) grids. They then deposited zinc acetylacetonate vapour onto the graphene.

¡°By heating up the zinc, we decompose it so that small amounts of zinc oxide remain on the graphene,¡± explains Rümmeli. ¡°We then transfer the sample to a TEM and irradiate it with electrons so that the ZnO atoms can move around on the graphene surface. We can also use the electron beam from the TEM to form pores in the graphene. If the ZnO atoms encounter a pore, they start to collect there and form a membrane.¡±

During this process, the atoms in the underlying graphene get sputtered away, he adds, leaving a free-standing ZnO membrane in a graphene pore.

These membranes have good mechanical properties in that they are elastic and flexible (much more so than graphene single layers, for example), and are piezoelectric too. They are semiconducting with a wide electronic bandgap of 3.576 eV and a large excitation binding energy, which makes them promising for switching electronics applications, transparent electronics, ultraviolet light emitters, piezoelectric devices and chemical sensors.
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